Research Contents

Heteroepitaxial growth of compound semiconductors on silicon substrates
GaN-based light emitting devices on silicon substrates
GaN-based electronic devices on silicon substrates


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Heteroepitaxial growth of compound semiconductors on silicon substrates


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GaN-based light emitting devices on silicon substrates

GaAs-based semiconductor materials have been widely used to fabricate the light emitting devices. These materials contain toxic elements, such as arsenic and phosphorus. Therefore, it is very troublesome when it comes to dispose of the used devices. Furthermore, the devices emitting the blue and green light cannot be fabricated by using these materials.

GaN-based semiconductor materials do not contain any toxic elements. Nowadays, the sapphire and SiC are commonly used as the substrates for the GaN-based films. However, they are too expensive for the low-cost mass production. If the GaN-based light emitting devices could be fabricated on the silicon substrates, both of toxic and cost problems will be solved.

The light emitting devices fabricated by using GaN on silicon techniques have the following advantages:

  1. The emission wavelength of these devices could cover the spectral region from UV to visible, including blue, green, and red. Therefore, full color could be obtained by proper color mixing.
  2. These devices are human and environment friendly.
  3. The cost of these devices on silicon substrates is about one tenth or hundredth of these on sapphire or SiC substrates.
The@GaN-based light emitting devices on silicon substrates have a plenty of applications.


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GaN-based electronic devices on silicon substrates

As the highest Operation temperature of electronics based on silicon or GaAs could not be higher than is about 100 Ž., Aapplications of these devices in the high-temperature environment, such as vehicles in an automobile, are limited. Because arsenic is included in these devices, disposal of the used devices will cause lot environment problems. With a wide spread of broad band products, such as the mobile phone and internet, high frequency and high power electronic devices are in high demand to construct high capacity and high speed communication system. GaN-based materials grown on silicon substrates are very suitable to fabricate high-temperature, high-frequency and@high-power electronic devices which could satisfiedy the above demands.

Advantages of the electronic devices fabricated on GaN grown on silicon substrates:

  1. Stable operation@at the environment temperature of 500 Ž
  2. High output power at the high frequency@of 100 GHz
  3. No harm to the human and environment
Applications of these devices:


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