Paper List


April 2006 - March 2007F

1. Al composition dependent properties of quaternary AlInGaN schottky diodes
J. Appl. Phys., Vol. 99, No. 12, pp.123702-1 - 123702-7 (2006).
Y. Liu, H. Jiang, T. Egawa, B. Zhang and H. Ishikawa.

2. Novel Quaternary AlInGaN/GaN Heterostructure field effect transistors on sapphire substrate
Jpn. J. Appl. Phys., Vol. 45, No. 7, pp. 5728-5731 (2006).
Y. Liu, T. Egawa, H. Jiang, B. Zhang and H. Ishikawa.

3. GaN growth on 150-mm-diameter (1 1 1) Si substrate
J. Crystal Growth, Vol. 298, pp. 198-201 (2006).
A. Ubukata, K. Ikenaga, N. Akutsu, A. Yamaguchi, K. Matsumoto, T. Yamazaki and T. Egawa.

4. Enhancement of drain current density by inserting 3 nm Al layer in the gate of AlGaN /GaN high-electron-mobility transistors on 4 in. silicon
Appl. Phys. Lett., Vol. 89, No. 19, pp.193508-1 - 193505-3 (2006).
S. Lawrence Selvaraj and T. Egawa.

5. Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer
Solid-State Electronics, Vol. 50, pp. 1515-1521 (2006).
Y. Liu, T. Egawa, H. Jiang, B. Zhang and H. Ishikawa.

6. AlGaN solar-blind schottky photodiodes fabricated on 4H-SiC
IEEE Photo. Tech. Lett., Vol. 18, No. 12, pp. 1353-1355 (2006).
H. Jiang, T. Egawa and H. Ishikawa.

7. Highly efficient GaN-based light emitting diodes with micropits
Appl. Phys. Lett., Vol. 89, pp.24197-1 - 24197-3 (2006).
M. Hao, T. Egawa and H. Ishikawa.

8. Hybrid control of nonholonomic chained systems - controllers based on sampled-data control and coordinate transformations -
Journal of the Society of Instrument and Control Engineerings, Vol. 45, No. 7, pp. 582-588 (2006).
M. Yamada.

9. Highly quality AlGaN solar-blind Schottky photodiodes fabricated on AlN/sapphire template
Appl. Phys. Lett., Vol. 90, pp. 121121-1 - 121121-3 (2007).
H. Jiang and T. Egawa.

April 2005 - March 2006F

1. Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
Solid-State Electronics, Vol. 49, pp. 1632-1638 (2005).
S. Arulkumaran, T. Egawa and H. Ishikawa

2. AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
IEEE Trans. Electron Devices, Vol. 52, No. 9, pp. 1963-1968 (2005).
M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, T. Ueda, Y. Uemoto, T. Tanaaka, D. Ueda and T. Egawa.

3. Characterization of AlGaN/GaN HFETs on a Si substrate grown by MOCVD
Extended Abstract of the 2005 International Conference on Solid State Devices and Materials, pp. 468-469 (2005).
T. Egawa

4. Hetero-epitaxial growth of GaN onto SiC-on-SIMOX substrates
Extended Abstract of the 2005 International Conference on Solid State Devices and Materials, pp. 148-149 (2005).
T. Yokoyama, T. Egawa, K. Oouchi, M. Nakao, T. Shirahata, S. Kobayashi and K. Izumi

5. Reduction of threading dislocations in AlGaN layers grown on AlN/sapphire templates using high-temperature GaN interlayer
J. J. Appl. Phys., Vol. 45, No. 8, pp. L220-L223 (2006).
S. Arulkumaran, T. Egawa, S. Lawrence Selvaraj and H. Ishikawa.

6. On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors
J. J. Appl. Phys., Vol. 44, No. 9A, pp.6490-6494 (2005).
M. Miyoshi, A. Imanishi, T. Egawa, H. Ishikaawa, K. Asai, T. Shibata, M. Tanaka and O. Oda.

7. DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AlN/sapphire templates
J. Mater. Sci. Lett., Vol. 22, pp. 799-802 (2003).
Y. Sun, T. Egawa, L. Zhang and X. Yao.

8. Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properites
J. Vac. Sci. Technol. Vol. B23, No. 4, pp.1527-1531 (2005).
M. Miyoshi, T. Egaawa and H. Ishikawa.

9. Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates
J. Appl. Phys., Vol. 98, pp.063713-1 - 063713-5 (2005).
M. Miyoshi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, M. Tanaka and O. Oda.

10. A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration
IEEE Trans. Electron Devices, Vol. 52, No. 8, pp.1893-1899 (2005)
H. Ishida, Y. Hirose, T. Murata, Y. Ikeda, T. Matsuno, K. Inoue, Y. Umenoto, T. Tanaka, T. Egawa and D. Ueda.

11. Demonstration of undoped quaternary AllnGaN/GaN heterostructure field-effect transistor on sapphire substrate
Appl. Phys. Lett., Vol. 86, pp. 223510-1 - 223510-3 (2005).
Y. Liu, H. Jiang, S. Arulkumaran, T. Egawa, B. Zhang and H. Ishikawa.

12. Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers
IEEE Trans. Electron Devices, Vol. 52, No. 10, pp. 2124-2128 (2005).
S. Nakazawa, T. Ueda, K. Inoue, T. Tanaka, H. Ishikawa and T. Egawa.

13. Novel quaternary AllnGaN/GaN HFET grown by MOCVD on sapphire substrate
Extended Abstract of the 2005 International Conference on Solid State Devices and Materials, pp. 474-475 (2005).
Y. Liu, T. Egawa, H. Jiang and H. Ishikawa

14. First-principles calculation of bandgap bowing parameter for wurtzite InAlGaN quaternary alloy using large supercell
Extended Abstract of the 2005 International Conference on Solid State Devices and Materials, pp. 138-139 (2005).
T. Takizawa, S. Nakazawa, T. Ueda, T. Tanaka and T. Egawa

15. Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN High-electron-mobility transistors
J. J. Appl. Phys., Vol. 44, No. 5A, pp.2953-2960 (2005).
S. Arulkumaran, T. Egawa and H. Ishikawa.
Phys. Stat. Sol. (c), Vol. 0, No. 7, pp. 2091-2094 (2003).

16. A comparison on the electrical characteristics of SiO2, SiON and SiN as the gate insulators for the fabrication of AlGaN/GaN metal-oxide / insulator-semiconductor high-electron mobility-transistors
J. J. Appl. Phys., Vol. 44, No. 7A, pp. 4911-4913 (2005).
K. Balachander, S. Arulkumaran, T. Egawa, Y. Sano and K. Baskar.

17. Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors
J. J. Appl. Phys., Vol. 44, No. 5A, Vol. 44, No. 25, pp. L812-L815 (2005).
S. Arulkumaran, T. Egawa and H. Ishikawa.

18. Robust global exponential stabilization of an underactuated airship
16th IFAC Would Congress, pp. Mo-A02-To/5 (2005).
M. Yamada and M. Tomizuka.



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